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10 March 2020 Microscopic simulation of hot carrier effects in quantum well solar cells (Conference Presentation)
Urs Aeberhard
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Proceedings Volume 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX; 1127509 (2020) https://doi.org/10.1117/12.2546584
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Hot-carrier effects on the photocurrent generation in quantum well solar cells are assessed on the basis of quantum transport simulations under simultaneous consideration of electron-photon, electron-phonon, and electron-electron scattering. The interactions are treated on equal footing via respective self-energy expressions in the non-equilibrium Green‘s function formalism. Under moderate light concentration, carrier-carrier scattering preserves the electronic structure, but enhances the escape rate of carriers generated in confined states due to the creation of a hot carrier quasi-equilibrium population above the barrier. Both elevated carrier temperature and fast carrier escape are reflected in the simulated photoluminescence spectra, in agreement with experimental observation.
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Urs Aeberhard "Microscopic simulation of hot carrier effects in quantum well solar cells (Conference Presentation)", Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 1127509 (10 March 2020); https://doi.org/10.1117/12.2546584
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KEYWORDS
Quantum wells
Solar cells
Phonons
Photovoltaics
Scattering
Solar energy
Electrons
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