Can we make In2O3 and Ga2O3 p-type? (Conference Presentation)

Anderson Janotti

doi:10.1117/12.2552728

10 March 2020 Can we make In₂O₃ and Ga₂O₃ p-type? (Conference Presentation)

Anderson Janotti

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 1128106 (2020) https://doi.org/10.1117/12.2552728
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

P-type doping of wide-band-gap oxides such as In2O3 and Ga2O3 would open vast opportunities in device in device design, ranging from transparent contacts for solar cells to high-power transistors. In this presentation we discuss the fundamental difficulties concerning p-type doping in these materials and opportunities offered by forming dilute alloys, with minimum disturbance in structural parameters yet bringing beneficial changes to their electronic structure.

Conference Presentation

Citation Download Citation

Anderson Janotti "Can we make In₂O₃ and Ga₂O₃ p-type? (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128106 (10 March 2020); https://doi.org/10.1117/12.2552728

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