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10 March 2020 Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors and UV photodetectors (Conference Presentation)
Johnny Ho
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Proceedings Volume 11288, Quantum Sensing and Nano Electronics and Photonics XVII; 112881A (2020) https://doi.org/10.1117/12.2542648
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
This Conference Presentation, "Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors and UV photodetectors," was recorded at Photonics West 2020 held in San Francisco, California, United States.
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Johnny Ho "Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors and UV photodetectors (Conference Presentation)", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112881A (10 March 2020); https://doi.org/10.1117/12.2542648
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KEYWORDS
Crystals
Photodetectors
Transistors
Ultraviolet radiation
Nanowires
Superlattices
Thin films
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