Presentation
10 March 2020 Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors and UV photodetectors (Conference Presentation)
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Abstract
This Conference Presentation, "Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors and UV photodetectors," was recorded at Photonics West 2020 held in San Francisco, California, United States.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johnny Ho "Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors and UV photodetectors (Conference Presentation)", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112881A (10 March 2020); https://doi.org/10.1117/12.2542648
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KEYWORDS
Crystals

Photodetectors

Transistors

Ultraviolet radiation

Nanowires

Superlattices

Thin films

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