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9 March 2020 Progress in AlGaN UVC LEDs by improving light extraction efficiency (Conference Presentation)
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama
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Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 113021C (2020) https://doi.org/10.1117/12.2543013
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
AlGaN UVC light-emitting diodes (LEDs) are attracting much attentions for applications of sterilization and water purification. Here, we demonstrated the improvement in LEE by employing a photonic crystal (PhC) structure in a p-GaN contact layer. FDTD Simulation showed a significant reflection of emitted light at the interface between the PhC and the active layer, which was a function of the distance between the PhC and the active layer as well as the PhC parameters. A UVC LED with a PhC structure showed an enhanced LEE by 1.9 times compared to an LED without a PhC structure.
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Masafumi Jo, Noritoshi Maeda, and Hideki Hirayama "Progress in AlGaN UVC LEDs by improving light extraction efficiency (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113021C (9 March 2020); https://doi.org/10.1117/12.2543013
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KEYWORDS
Light emitting diodes
Absorption
Aluminum nitride
Finite-difference time-domain method
Internal quantum efficiency
Lamps
Mercury
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