Phase-Locked Arrays Of InGaAsP/InP Diode Lasers Grown By Low-Pressure Metalorganic Chemical Vapor Deposition

F. Lozes-Dupuy; S. Bonnefont; A. Bensoussan; M. Delort; G. Vassilieff; H. Martinot; R. Blondeau; M. Krakowski; D. Rondi

doi:10.1117/12.961541

6 October 1989 Phase-Locked Arrays Of InGaAsP/InP Diode Lasers Grown By Low-Pressure Metalorganic Chemical Vapor Deposition

F. Lozes-Dupuy, S. Bonnefont, A. Bensoussan, M. Delort, G. Vassilieff, H. Martinot, R. Blondeau, M. Krakowski, D. Rondi

Author Affiliations +

Proceedings Volume 1131, Optical Space Communication; (1989) https://doi.org/10.1117/12.961541
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Results on phase-locked arrays of InGaAsP/InP index-guided diode lasers grown entirely by low pressure metalorganic chemical vapour deposition are presented. Two different array structures are compared : 1) the evanescently coupled array of inverted channeled substrate planar lasers and 2) the Y-junction coupled array of buried ridge lasers in order to assess their potential as sources of high powers in stable and narrow beam. Single-lobe beam operation is achieved by evanescent coupling, while the device is shown to be sensitive to fabrication and operation conditions and not practical as high power source. Uncoated Y-coupled arrays exhibit output power up to 158 mW CW/facet when bonded on diamond heatsink. Such devices are expected to give enhanced performance by further improvement in design and fabrication and should prove useful for free space optical communications.

Citation Download Citation

F. Lozes-Dupuy, S. Bonnefont, A. Bensoussan, M. Delort, G. Vassilieff, H. Martinot, R. Blondeau, M. Krakowski, and D. Rondi "Phase-Locked Arrays Of InGaAsP/InP Diode Lasers Grown By Low-Pressure Metalorganic Chemical Vapor Deposition", Proc. SPIE 1131, Optical Space Communication, (6 October 1989); https://doi.org/10.1117/12.961541

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