EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity, and stochastic defectivity

Seiji Nagahara; Cong Que Dinh; Keisuke Yoshida; Gosuke Shiraishi; Yoshihiro Kondo; Kosuke Yoshihara; Kathleen Nafus; John S. Petersen; Danilo De Simone; Philippe Foubert; Geert Vandenberghe; Hans-Jürgen Stock; Balint Meliorisz

doi:10.1117/12.2552166

30 March 2020 EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity, and stochastic defectivity

Seiji Nagahara, Cong Que Dinh, Keisuke Yoshida, Gosuke Shiraishi, Yoshihiro Kondo, Kosuke Yoshihara, Kathleen Nafus, John S. Petersen, Danilo De Simone, Philippe Foubert, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

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Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 113260A (2020) https://doi.org/10.1117/12.2552166
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Flood Exposure Assisted Chemical Gradient Enhancement Technology (FACET) is introduced for improvement in EUV resist resolution, process control, roughness, patterning failure and sensitivity. Experimental EUV exposure latitude was enhanced (~1.5 times) with FACET using the assist of UV flood exposure. The mechanism of the process window improvement by FACET is explained by non-linear resist coloring (enhancement of UV absorption) vs. EUV exposure dose to enhance acid image contrast during UV flood exposure. To balance chemical gradient enhancement and stochastic effects, Stochastic Aware Resist Formulation and Process optimizer (SARF-Pro) with a fast stochastic simulation model is created. SARF-Pro predicts stochastic patterning failure risks, and optimizes resist formulation and processes by putting emphasis on stochastic variation across patterns. Photosensitized Chemically Amplified ResistTM (PSCARTM) 2.0 with FACET and standard chemically amplified resist (CAR) optimized in SARF-Pro suggests that PSCAR 2.0 with FACET has the potential of better process window, roughness, sensitivity and, we hypothesize, reduced risk of stochastic defects compared with standard CAR.

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Seiji Nagahara, Cong Que Dinh, Keisuke Yoshida, Gosuke Shiraishi, Yoshihiro Kondo, Kosuke Yoshihara, Kathleen Nafus, John S. Petersen, Danilo De Simone, Philippe Foubert, Geert Vandenberghe, Hans-Jürgen Stock, and Balint Meliorisz "EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity, and stochastic defectivity", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260A (30 March 2020); https://doi.org/10.1117/12.2552166

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