Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography

Nikhil Tiwale; Ashwanth Subramanian; Kim Kisslinger; Ming Lu; Jiyoung Kim; Aaron Stein; Chang-Yong Nam

doi:10.1117/12.2552164

23 March 2020 Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography

Nikhil Tiwale, Ashwanth Subramanian, Kim Kisslinger, Ming Lu, Jiyoung Kim, Aaron Stein, Chang-Yong Nam

Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 113260J (2020) https://doi.org/10.1117/12.2552164
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

We demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into high-performance positive tone hybrid resist platform. A model thin film PMMA-AlOx hybrid resist system has been synthesized by hybridization of PMMA with AlOx and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a low-temperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO₂, with estimated achievable selectivity in excess of ~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.

Conference Presentation

Citation Download Citation

Nikhil Tiwale, Ashwanth Subramanian, Kim Kisslinger, Ming Lu, Jiyoung Kim, Aaron Stein, and Chang-Yong Nam "Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260J (23 March 2020); https://doi.org/10.1117/12.2552164

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