Presentation + Paper
23 March 2020 Compact resist model using single convolution kernel
Author Affiliations +
Abstract
Lithography simulation is an essential technique for today's semiconductor manufacturing process. Although several rigorous models have been proposed, these methods are time-consuming. In order to calculate a full chip in realistic time, a fast and accurate resist model is essential. This paper proposes a new compact resist model using an arbitrary convolution kernel. The convolution formula can be described as a system of linear equations, therefore, we can determine the convolution kernel by solving the system of linear equations. However, it is hard to find the effective solution, because it is an ill-posed linear inverse problem due to the measurement constraints. Therefore, the key point of our method is how to solve the ill-posed linear inverse problem. In this paper, we explain the details and effectiveness of our method.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taiki Kimura, Tetsuaki Matsunawa, and Shoji Mimotogi "Compact resist model using single convolution kernel", Proc. SPIE 11327, Optical Microlithography XXXIII, 113270H (23 March 2020); https://doi.org/10.1117/12.2551859
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KEYWORDS
Convolution

Photomasks

Inverse problems

Lithography

Statistical modeling

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