Effect of spot size on laser damage single crystal silicon

Ming Guo; Yongxiang Zhang; Wenying Zhang; Hong Li

doi:10.1117/12.2542958

18 December 2019 Effect of spot size on laser damage single crystal silicon

Ming Guo, Yongxiang Zhang, Wenying Zhang, Hong Li

Author Affiliations +

Proceedings Volume 11333, AOPC 2019: Advanced Laser Materials and Laser Technology; 113330L (2019) https://doi.org/10.1117/12.2542958
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

Spot size is an important factor affecting the interaction between laser and single crystal silicon. Different radius millisecond pulsed laser is used to irradiate single crystal silicon. The effects of laser irradiation on large and small spot size, including temperature rise, damage area and damage morphology, are compared and analyzed. The influence rule of spot size on laser-induced single crystal silicon is determined and its mechanism is analyzed. The results show that the peak temperature of the laser irradiation center point is higher when the spot radius is 0.2 cm than when the spot radius is 0.1 cm; the damage area of single crystal silicon increases with the increase of laser energy density; the damage threshold decreases with the increase of laser spot size, and increases with the increase of pulse width.

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Ming Guo, Yongxiang Zhang, Wenying Zhang, and Hong Li "Effect of spot size on laser damage single crystal silicon", Proc. SPIE 11333, AOPC 2019: Advanced Laser Materials and Laser Technology, 113330L (18 December 2019); https://doi.org/10.1117/12.2542958

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KEYWORDS

Silicon

Crystals

Laser crystals

Semiconductor lasers

Pulsed laser operation

Laser energy

Laser induced damage

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