Ravi Ranjan,1 Prakash Pareek,2 Saurabh K. Pandey,3 Sanjay Kumar,1 Jitendra K. Mishra4
1Darbhanga College of Engineering (India) 2Vaagdevi Engineering College (India) 3Indian Institute of Technology Patna (India) 4Indian Institute of Information Technology, Ranchi (India)
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The Ge1-xSnx material system has been introduced as a potential solution for low-cost high-performance photodetector for short-wave infrared towards mid-infrared detections. An investigation of GeSn/SiGeSn nanostructure layer is reported for sensors for near and mid-infrared applications. Physics-based models will be developed for SiGeSn/GeSn based nanostructured sensors considering the carrier dynamics at hetero-interface, misfit dislocation and strain at the interface. We analyze the effect of biaxial strain on SiGeSn/GeSn alloys and determine the range of wavelength for the possible application in near and midinfrared range.
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Ravi Ranjan, Prakash Pareek, Saurabh K. Pandey, Sanjay Kumar, Jitendra K. Mishra, "Investigation of GeSn/SiGeSn nanostructured layer for sensors in mid-infrared application," Proc. SPIE 11345, Nanophotonics VIII, 113452K (13 April 2020); https://doi.org/10.1117/12.2555931