Physical properties of CrxN thin films

Taras T. Kovaliuk; Mykhailo M. Solovan; Orest A. Parfenyuk; Ivan P. Koziarskyi; Pavlo D. Maryanchuk

doi:10.1117/12.2553968

6 February 2020 Physical properties of Cr_xN thin films

Taras T. Kovaliuk, Mykhailo M. Solovan, Orest A. Parfenyuk, Ivan P. Koziarskyi, Pavlo D. Maryanchuk

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Proceedings Volume 11369, Fourteenth International Conference on Correlation Optics; 113691F (2020) https://doi.org/10.1117/12.2553968
Event: Fourteenth International Conference on Correlation Optics, 2019, Chernivtsi, Ukraine

Abstract

Chromium nitride (Cr_xN) thin films were deposited by DC reactive magnetron sputtering at different ratios between partial pressures of nitrogen. Electrical and optical properties of the thin films were investigated. Temperature dependences of the resistance R of the Cr_xN films were measured within the temperature range T ÷ 295-420 K. Based on the dependences α² = f(hν), the presence of direct allowed interband optical transitions in the Cr_xN thin films is established and the optical band gap values are determined for all sample before and after annealing.

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Taras T. Kovaliuk, Mykhailo M. Solovan, Orest A. Parfenyuk, Ivan P. Koziarskyi, and Pavlo D. Maryanchuk "Physical properties of Cr_xN thin films", Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691F (6 February 2020); https://doi.org/10.1117/12.2553968

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