Parameters Affecting Alignment Dispersion On An Optical Wafer Stepper

Alain Charles

doi:10.1117/12.961745

11 October 1989 Parameters Affecting Alignment Dispersion On An Optical Wafer Stepper

Alain Charles

Proceedings Volume 1138, Optical Microlithography and Metrology for Microcircuit Fabrication; (1989) https://doi.org/10.1117/12.961745
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Alignment dispersion can only consume a small part of the overlay budget. Thus, it is important to study the causes of alignment dispersion. Two parameters which damage alignment dispersion have been studied. The first stems from the centrifugal forces acting on the photoresist in the vicinity of the alignment mark which produce an asymmetrical modulation leading to a misalignment component. The effect of the grid layout, alignment mark design, are studied. Rather than on modify the spin resist process, or remove the resist on the alignment target, a new kind of alignment mark, which is much less sensitive to this effect, is proposed. The second is the roughness of the Aluminium substrate. In order to measure the effect of the surface roughness on alignment performance, different aluminium grain sizes have been prepared and tested. The study has been performed for two alignment marks and two resist systems.

Citation Download Citation

Alain Charles "Parameters Affecting Alignment Dispersion On An Optical Wafer Stepper", Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); https://doi.org/10.1117/12.961745

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