Barrier Ohmic Contacts To Indium Gallium Arsenide

P. J. T. Mellor; J. Herniman

doi:10.1117/12.962020

28 November 1989 Barrier Ohmic Contacts To Indium Gallium Arsenide

P. J. T. Mellor, J. Herniman

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962020
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

The addition of a barrier layer to Ni-Au-Ge Ohmic contacts on n-InGaAs were investigated over a range of alloying/sintering temperatures and surface pre-treatments. A 20% HCl dip followed by deposition of Ni-Au-Ge-ZrB2-Au produced good ohmic contacts, electrically and physically. These had contact resistance values of 0.33 Ω.mm as deposited and a minimum of 0.05 Ω.mm for a peak sinter temperature of 260°C. Specific contact resistivity was in the 10-7 Ω.cm2 range. Contact stability and morphology were shown to be enhanced by use of the barrier layer. Using a barrier layer there was no significant rise in contact resistance after 100 h at 300°C; without a barrier layer the resistance increased by 73%. J-FETs fabricated in InGaAs on InP with a ZrB2 barrier have been fabricated successfully. The measured contact resistance was < 0.03 Ω.mm which has contributed to the good current and transconductance characteristics.

Citation Download Citation

P. J. T. Mellor and J. Herniman "Barrier Ohmic Contacts To Indium Gallium Arsenide", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962020

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