Deep Levels In InP By DLTS and TSCAP: Survey And Recent Data

A. Singh; W. A. Anderson; Y. S. Lee; K. Jiao

doi:10.1117/12.961985

28 November 1989 Deep Levels In InP By DLTS and TSCAP: Survey And Recent Data

A. Singh, W. A. Anderson, Y. S. Lee, K. Jiao

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961985
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Electron and hole traps in the same p-InP:Zn substrate were studied by DLTS and TSCAP methods prior to and after irradiation. Prior to irradiation, the DLTS measurements at a quiescent reverse bias of 3V, indicated the existence of three hole traps, H1 (Ev + 0.56eV), H2 (Ev+0.22eV), H3 (Ev+0.14eV) and one electron trap, E1(Ec-0.40eV). The DLTS spectra at a quiescent forward bias of 0.2V, revealed only one interfacial trap, Hi (Ev+0.25eV) which was different from the trap H2. From the bias dependence of the DLTS-data on the most prominent hole trap, the depth variation of trap parameters in surface barrier devices was established. After electron irradiation of the Yb/p-InP MIS device, the electron trap was annealed and four hole traps were observed. Trap data were also obtained on Au or Pd/oxide/n-InP bulk or MOCVD-epitaxial layers, and n +/p junctions grown by MOCVD. Trap parameters are very sensitive to surface conditions, type of metal, presence of oxide, type of device and semiconductor growth technique.

Citation Download Citation

A. Singh, W. A. Anderson, Y. S. Lee, and K. Jiao "Deep Levels In InP By DLTS and TSCAP: Survey And Recent Data", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961985

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