PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
This paper discusses the development of InP based Charge-Coupled Device addressed Multi-Quantum Well Spatial Light Modulators. These devices are based on the quantum-confined Stark effect and promise to be very fast, with response times in the fractional nsec range.
K. Y. Han,C. W. Chen,J. H. Quigley,M. Hafich,G. Y. Robinson,R. Chang, andD. L. Lile
"InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962027
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
K. Y. Han, C. W. Chen, J. H. Quigley, M. Hafich, G. Y. Robinson, R. Chang, D. L. Lile, "InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications," Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962027