InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications

K. Y. Han; C. W. Chen; J. H. Quigley; M. Hafich; G. Y. Robinson; R. Chang; D. L. Lile

doi:10.1117/12.962027

28 November 1989 InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications

K. Y. Han, C. W. Chen, J. H. Quigley, M. Hafich, G. Y. Robinson, R. Chang, D. L. Lile

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962027
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

This paper discusses the development of InP based Charge-Coupled Device addressed Multi-Quantum Well Spatial Light Modulators. These devices are based on the quantum-confined Stark effect and promise to be very fast, with response times in the fractional nsec range.

Citation Download Citation

K. Y. Han, C. W. Chen, J. H. Quigley, M. Hafich, G. Y. Robinson, R. Chang, and D. L. Lile "InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962027

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