PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
High barrier height metal-insulator (oxide)-semiconductor diodes were fabricated using Au or Yb on p-InP, and Au or Pd on n-InP. Au oxide is unnecessary for p-InP whereas a chemically-grown oxide on n-InP produces a barrier height as high as 0.859eV. Ellipsometry and ESCA were used to determine oxide thickness of about 40A and a mixed composition. Current-voltage-temperature data reveal different conduction mechanisms depending on structure and temperature. Certain conditions suggest a surface state recombination due to a 0.4eV level above the valence band. Operation under steady for-ward or reverse bias stabilizes diodes with thermal oxide on n-InP but shows some degradation with chemical oxides.
Y. S. Lee andW. A. Anderson
"Interface Properties Of High Barrier Height MIS Diodes On InP", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962004
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Y. S. Lee, W. A. Anderson, "Interface Properties Of High Barrier Height MIS Diodes On InP," Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962004