Interface Properties Of High Barrier Height MIS Diodes On InP

Y. S. Lee; W. A. Anderson

doi:10.1117/12.962004

28 November 1989 Interface Properties Of High Barrier Height MIS Diodes On InP

Y. S. Lee, W. A. Anderson

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962004
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

High barrier height metal-insulator (oxide)-semiconductor diodes were fabricated using Au or Yb on p-InP, and Au or Pd on n-InP. Au oxide is unnecessary for p-InP whereas a chemically-grown oxide on n-InP produces a barrier height as high as 0.859eV. Ellipsometry and ESCA were used to determine oxide thickness of about 40A and a mixed composition. Current-voltage-temperature data reveal different conduction mechanisms depending on structure and temperature. Certain conditions suggest a surface state recombination due to a 0.4eV level above the valence band. Operation under steady for-ward or reverse bias stabilizes diodes with thermal oxide on n-InP but shows some degradation with chemical oxides.

Citation Download Citation

Y. S. Lee and W. A. Anderson "Interface Properties Of High Barrier Height MIS Diodes On InP", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962004

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