The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers

K. D. Chik; B. A. Richardson

doi:10.1117/12.962030

28 November 1989 The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers

K. D. Chik, B. A. Richardson

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962030
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

The characteristics of carrier leakage and the effects of carrier leakage on the lasing threshold and its temperature dependence in 1.3μm wavelength GaInAsP/InP double heterojunction lasers have been calculated and compared with experimental results. The agreement between measured and theoretical results provides strong evidence that carrier leakage in such devices is related to the Auger recombination processes.

Citation Download Citation

K. D. Chik and B. A. Richardson "The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962030

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available