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The characteristics of carrier leakage and the effects of carrier leakage on the lasing threshold and its temperature dependence in 1.3μm wavelength GaInAsP/InP double heterojunction lasers have been calculated and compared with experimental results. The agreement between measured and theoretical results provides strong evidence that carrier leakage in such devices is related to the Auger recombination processes.
K. D. Chik andB. A. Richardson
"The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962030
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K. D. Chik, B. A. Richardson, "The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers," Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962030