The Sulfur Passivation Of InP And GaAs Surfaces

K. M. Geib; J. Shin; C. W. Wilmsen

doi:10.1117/12.962013

28 November 1989 The Sulfur Passivation Of InP And GaAs Surfaces

K. M. Geib, J. Shin, C. W. Wilmsen

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962013
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Recently, sulfur treatments have been reported which passivate the InP and GaAs surfaces. From the variety of experiments reported on sulfurized surfaces, it is clear that the treatments can improve the electronic properties, however, the chemistry of the surface after the treatments has not been fully explained. We have applied X-ray photoelectron spectroscopy to determine the bonding of the InP and GaAs surfaces after a variety of sulfur treatments. Based on these data and that reported in the literature, we propose a model in which the sulfur at low temperature only chemisorbs on the surface and does not break back-bonds or intermix with the substrate. We postulate that thermodynamics does not determine the low temperature surface chemistry. Instead, the wet chemistry processing plays the major role since it determines which species of the substrate atoms will terminate the surface. The GaAs appears to be As terminated and hence As-S chemisorption bonds primarily occur. On InP the S bonds to the surface In atoms.

Citation Download Citation

K. M. Geib, J. Shin, and C. W. Wilmsen "The Sulfur Passivation Of InP And GaAs Surfaces", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962013

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