PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Metal-semiconductor contacts have been the subject of intense investigation and study for several decades. With the advent of atomically-thin semiconductors new opportunities have emerged in investigating these mysterious yet, critical buried interfaces. In this talk we will show our recent advances in probing the nature of these contacts by a variety of scanning probe techniques. The primary model system will be that a bulk noble metal such as gold or silver and a 2D chalcogenides semiconductor such a molybdenum disulfide (MoS2). We will discuss impact of contact type and evaporation technique on the electrical and optical properties of the junction and suggest ways to make idealized contacts. We will then extend our analysis to looking at the same interface from an optical perspective and investigating hybrid states of excitons and plasmons observed via near-field photoluminescence micro-spectroscopy.
Deep Jariwala
"Understanding Metal-Semiconductor Interfaces in the atomically thin limit", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650E (21 August 2020); https://doi.org/10.1117/12.2567583
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Deep Jariwala, "Understanding Metal-Semiconductor Interfaces in the atomically thin limit," Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650E (21 August 2020); https://doi.org/10.1117/12.2567583