Presentation
21 August 2020 Understanding Metal-Semiconductor Interfaces in the atomically thin limit
Author Affiliations +
Abstract
Metal-semiconductor contacts have been the subject of intense investigation and study for several decades. With the advent of atomically-thin semiconductors new opportunities have emerged in investigating these mysterious yet, critical buried interfaces. In this talk we will show our recent advances in probing the nature of these contacts by a variety of scanning probe techniques. The primary model system will be that a bulk noble metal such as gold or silver and a 2D chalcogenides semiconductor such a molybdenum disulfide (MoS2). We will discuss impact of contact type and evaporation technique on the electrical and optical properties of the junction and suggest ways to make idealized contacts. We will then extend our analysis to looking at the same interface from an optical perspective and investigating hybrid states of excitons and plasmons observed via near-field photoluminescence micro-spectroscopy.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deep Jariwala "Understanding Metal-Semiconductor Interfaces in the atomically thin limit", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650E (21 August 2020); https://doi.org/10.1117/12.2567583
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KEYWORDS
Interfaces

Near field

Semiconductors

Chalcogenides

Gold

Metals

Molybdenum

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