Nanoscale investigation of extended defects in wide-bandgap semiconductors by exploiting phonon-resonant near-field interaction

Claire E. Marvinney; Benedikt Hauer; Martin Lewin; Nadeem A. Mahadik; Jennifer K. Hite; Nabil Bassim; Alexander J. Giles; Robert E. Stahlbusch; Joshua D. Caldwell; Thomas Taubner

doi:10.1117/12.2568576

20 August 2020 Nanoscale investigation of extended defects in wide-bandgap semiconductors by exploiting phonon-resonant near-field interaction

Claire E. Marvinney, Benedikt Hauer, Martin Lewin, Nadeem A. Mahadik, Jennifer K. Hite, Nabil Bassim, Alexander J. Giles, Robert E. Stahlbusch, Joshua D. Caldwell, Thomas Taubner

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Proceedings Volume 11468, Enhanced Spectroscopies and Nanoimaging 2020; 114680P (2020) https://doi.org/10.1117/12.2568576
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

We show how extended defects in wide bandgap semiconductors manifest in the nanoscale infrared phonon response probed by scattering-type scanning near-field optical microscopy (s-SNOM). We correlate the s-SNOM response of various defects in 4H-SiC with UV-photoluminescence, secondary electron and electron channeling contrast imaging, and transmission electron microscopy. We identify evidence of step-bunching, recombination-induced stacking faults, and threading screw dislocations, and also demonstrate the interaction of surface phonon polaritons with extended defects. Our s-SNOM results help to advance material growth efforts for electronic, photonic, phononic, and quantum optical applications.

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Claire E. Marvinney, Benedikt Hauer, Martin Lewin, Nadeem A. Mahadik, Jennifer K. Hite, Nabil Bassim, Alexander J. Giles, Robert E. Stahlbusch, Joshua D. Caldwell, and Thomas Taubner "Nanoscale investigation of extended defects in wide-bandgap semiconductors by exploiting phonon-resonant near-field interaction", Proc. SPIE 11468, Enhanced Spectroscopies and Nanoimaging 2020, 114680P (20 August 2020); https://doi.org/10.1117/12.2568576

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