Antiferromagnets are magnetically ordered materials without a macroscopic magnetization. As a result, they are of interest in the development of memory devices where data cannot be erased by external magnetic fields. However, the absence of a macroscopic moment also makes it difficult to electrically control their magnetic order (Néel vector). Here we show that pillars of antiferromagnetic PtMn, which are grown on heavy metal layers of Pt and Ta, can be reversibly switched between different magnetic states by electric currents [1]. The devices are based on materials that are typically used in the magnetic memory industry, and we observe switching with very low current densities. Furthermore, by varying the amplitude of the writing current, multi-level memory characteristics can be achieved.
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