Exciton Ionization Of InGaAs Quantum Wells

I. Bar-Joseph; M. Wegener; T. Y. Chang; D. S. Chemla

doi:10.1117/12.962151

4 January 1990 Exciton Ionization Of InGaAs Quantum Wells

I. Bar-Joseph, M. Wegener, T. Y. Chang, D. S. Chemla

Proceedings Volume 1148, Nonlinear Optical Properties of Materials; (1990) https://doi.org/10.1117/12.962151
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

We investigate the exciton ionization process in InGaAs quantum wells using 100 fs time resolved spectroscopy. The ionization time is studied as a function of temperature. We find a room temperature ionization time of ≈200 fs and longer times at lower temperatures. At room temperature the ionization is dominated by collisions with LO phonons, whereas at lower temperatures another, extrinsic mechanism becomes increasingly important.

Citation Download Citation

I. Bar-Joseph, M. Wegener, T. Y. Chang, and D. S. Chemla "Exciton Ionization Of InGaAs Quantum Wells", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962151

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