photoluminescence enhancement of CVD transition metal dichalcogenides based on electric field control

Shi Yu Deng; Kun Chen; Huanjun Chen

doi:10.1117/12.2575211

10 October 2020 photoluminescence enhancement of CVD transition metal dichalcogenides based on electric field control

Shi Yu Deng, Kun Chen, Huanjun Chen

Author Affiliations +

Proceedings Volume 11556, Nanophotonics and Micro/Nano Optics VI; 115560W (2020) https://doi.org/10.1117/12.2575211
Event: SPIE/COS Photonics Asia, 2020, Online Only

Conference Poster

Abstract

In this work, the method of electrostatic doping is used to achieve the PL enhancement of large scale MoS2 grown by chemical vapor deposition (CVD) method. It has been found that the release of strain in the as-grown monolayers by the transfer process is essential for TMDCs PL enhancement. To ensure the low contamination level on the 2D materials, a dry-transfer technique based on polydimethylsiloxane (PDMS) was utilized to transfer monolayer MoS2. We found that the peak PL intensity of CVD-grown MoS2 showing an enhancement up to 200% by adding both positive and negative back-gate voltage (Vg). Compared with the chemical treatment method, electrostatic doping can realize the controllable process of PL, that is, the PL intensity is gradually tuned by the gate voltage. In addition, covering the sample with PMMA (polymethyl methacrylate) can isolate the influences of the external environment on the sample, which can improve the stability of the sample and enable more stable measurements.

Citation Download Citation

Shi Yu Deng, Kun Chen, and Huanjun Chen "photoluminescence enhancement of CVD transition metal dichalcogenides based on electric field control", Proc. SPIE 11556, Nanophotonics and Micro/Nano Optics VI, 115560W (10 October 2020); https://doi.org/10.1117/12.2575211

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