Zero biased W band detector based on InGaAs Schottky diode

Bin Niu; Daoyu Fan; Xibang Zhou; Haodong Ling; Gang Lin; Tangsheng Chen

doi:10.1117/12.2575425

10 October 2020 Zero biased W band detector based on InGaAs Schottky diode

Bin Niu, Daoyu Fan, Xibang Zhou, Haodong Ling, Gang Lin, Tangsheng Chen

Author Affiliations +

Proceedings Volume 11559, Infrared, Millimeter-Wave, and Terahertz Technologies VII; 115590B (2020) https://doi.org/10.1117/12.2575425
Event: SPIE/COS Photonics Asia, 2020, Online Only

Abstract

InGaAs schottky diode with the property of low barrier height, simple material structure, and mature InP based integrated process, has become one of the major techniques for zero biased terahertz detector. As a thorough study from device to circuit, a “T” shape anode designed InGaAs SBD with ft over 3THz was presented, a novel device equivalent circuit model for InGaAs SBD was established, and a 75-110GHz W band zero biased detector circuit was design and fabricated, with the peak voltage responsivity of 25880V/W, indicating great potential for zero biased terahertz detection.

Conference Presentation

Citation Download Citation

Bin Niu, Daoyu Fan, Xibang Zhou, Haodong Ling, Gang Lin, and Tangsheng Chen "Zero biased W band detector based on InGaAs Schottky diode", Proc. SPIE 11559, Infrared, Millimeter-Wave, and Terahertz Technologies VII, 115590B (10 October 2020); https://doi.org/10.1117/12.2575425

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