Industry compatible methods for fabricating 2D materials generally rely on Chemical vapour deposition (CVD), Atomic Layer Deposition (ALD) or Molecular Beam Epitaxy (IBE). These methods although compatible, they do not allow for highly uniform, large-scale and high-performance layers at the same time. The reason is that the layer thickness, stoichiometry and crystallinity are controlled by one process. Dr Zeimpekis and the team have demonstrated a method that combines ALD and multistage annealing to decouple the control of film characteristics. This method has allowed them to fabricate 2D Thin Film Transistors (TFT) on flexible substrates and achieve superior performance metrics such as fast subthreshold slope at 80 mV/dec, high mobility at 55 cm2/V s and on/off ratios of more than 5 orders.
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