Presentation + Paper
22 February 2021 Self-aligned double pattern process using DSA pattern
Makoto Muramatsu, Takanori Nishi, Yasuyuki Ido, Takahiro Kitano
Author Affiliations +
Abstract
Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past years, many papers and presentation have been reported regarding DSA, and Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and /or other countries.) also has presented the evaluation results and the advantages of each1-10. Polystyrene-b-polymethyl methacrylate (PS-b-PMMA) has been used in many report because the polymerization technology is established and it is easy to form vertical patterns. In addition, the chemical epitaxy flow for PS-b-PMMA has established well to improve defectivity, line edge roughness and line width roughness. On the other hand, it is difficult to achieve less than 24nm pitch pattern by PS-b-PMMA because of the low chi parameter. In this paper, the combination process of DSA and SADP (self-aligned double pattern) is proposed for further small pitch pattern by PS-b- PMMA and latest results are reported.
Conference Presentation
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Makoto Muramatsu, Takanori Nishi, Yasuyuki Ido, and Takahiro Kitano "Self-aligned double pattern process using DSA pattern", Proc. SPIE 11612, Advances in Patterning Materials and Processes XXXVIII, 116120N (22 February 2021); https://doi.org/10.1117/12.2583668
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