The talk presents pertinent surface chemistries required to achieve a highly anisotropic etch of metal absorbers for EUV masks, with the goal of realizing a nearly vertical sidewall angle of 90º. The selection of gas phase chemistries is crucial to the success of the patterning process, therefore the selection criteria, based on thermodynamic and kinetic assessment, will be explained. The general approach combines either reactive ion etching or ion beam etching with atomic layer etching processes where the sequential surface reactions starts with controlled surface modification, followed by selective removal of the modified layer. This general approach can be applied to a variety of EUV mask materials, making it possible to tackle more complex material systems as needed.
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