Presentation
26 February 2021 Directional and selective patterning of EUV absorbers
Author Affiliations +
Abstract
The talk presents pertinent surface chemistries required to achieve a highly anisotropic etch of metal absorbers for EUV masks, with the goal of realizing a nearly vertical sidewall angle of 90º. The selection of gas phase chemistries is crucial to the success of the patterning process, therefore the selection criteria, based on thermodynamic and kinetic assessment, will be explained. The general approach combines either reactive ion etching or ion beam etching with atomic layer etching processes where the sequential surface reactions starts with controlled surface modification, followed by selective removal of the modified layer. This general approach can be applied to a variety of EUV mask materials, making it possible to tackle more complex material systems as needed.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xia Sang, Yantao Xia, Jane P. Chang, and Philippe Sautet "Directional and selective patterning of EUV absorbers", Proc. SPIE 11615, Advanced Etch Technology and Process Integration for Nanopatterning X, 1161503 (26 February 2021); https://doi.org/10.1117/12.2585410
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KEYWORDS
Extreme ultraviolet

Optical lithography

Etching

Reactive ion etching

Chemistry

Anisotropic etching

Complex systems

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