Tunable electroluminescence in ionic liquid gated atomically thin p-n junction

Chunrui Han; Yu Wang; Xin Guo; Lujun Bai; Siyuan Liu

doi:10.1117/12.2584965

4 December 2020 Tunable electroluminescence in ionic liquid gated atomically thin p-n junction

Chunrui Han, Yu Wang, Xin Guo, Lujun Bai, Siyuan Liu

Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 116170Z (2020) https://doi.org/10.1117/12.2584965
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China

Abstract

On chip light source is an indispensable component in the silicon based-photonic circuits. The emerging transition metal dichalcogenides, a prototype of van der Waals materials that features direct bandgap electronic structures, high exciton binding energy and wide compatibility with different substrates, offer opportunities for implementing novel light emitting devices. Here, we demonstrate an electrically pumped nanoemitter consisting of an atomically thin p-n junction with WS₂ monolayer as the channel material and ionic liquid as the gating dielectric. Strong and stable electroluminescence can be realized by adjusting the voltages of the source and drain electrodes. Meanwhile, the p-n junction can be driven back and forth between source and drain leading to a moving light spot with controlled position. Our results provide a new approach toward highly tunable light emitting devices based on TMDCs which could enable the integration with the photonic chips for a wide range of biomedicine, sensing and lighting applications.

Citation Download Citation

Chunrui Han, Yu Wang, Xin Guo, Lujun Bai, and Siyuan Liu "Tunable electroluminescence in ionic liquid gated atomically thin p-n junction", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 116170Z (4 December 2020); https://doi.org/10.1117/12.2584965

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