Localized surface plasmon resonance breaking the photodetection limit of Si-based Schottky photodetector

Hong-Jhang Syu; Zih-Chun Su; Yu-Chieh Huang; Wei-Che Chang; Ching-Fuh Lin

doi:10.1117/12.2578656

5 March 2021 Localized surface plasmon resonance breaking the photodetection limit of Si-based Schottky photodetector

Hong-Jhang Syu, Zih-Chun Su, Yu-Chieh Huang, Wei-Che Chang, Ching-Fuh Lin

Proceedings Volume 11680, Physics and Simulation of Optoelectronic Devices XXIX; 1168004 (2021) https://doi.org/10.1117/12.2578656
Event: SPIE OPTO, 2021, Online Only

Abstract

Nowadays, compound semiconductors are the main approach to detect mid-infrared (IR) light, such as HgCdTe and InAsSb, due to the bandgap tunability compared with Si. However, the epitaxy processes are expensive and energy-intensive. Also, compound devices are not compatible with Si-based IC manufacturing. To solve those problems, here, we apply inverted pyramid array structures (IPAS) to induce localized surface plasmon resonance (LSPR) for Si-based Schottky devices. While IR illuminates metal covered IPAS (metal-IPAS), the photo-electrons can accumulate photon energy repeatedly through IPAS induced LSPR. While the electron energy is large enough to overcome the Schottky barrier, so the photo-current is generated. Regarding device preparation and measurement, briefly, the IPAS were formed on n-type Si (n-Si) substrates through photolithography, dry etching, and wet etching. Afterward, 10-nm-thick Ag films and 100-nm-thick Ag grid anode were thermally deposited on the IPAS successively to form Schottky junctions. Finally, Al was thermally deposited on the back of n-Si wafers to be the cathode. After device fabrication, the devices were illuminated by a 4010 nm mid-IR pulse laser, generated from a 1064 nm pulse laser through an optical parametric generator. The photo-voltage of the device induced by the mid-IR was measured by an oscilloscope. Consequently, the oscilloscope showed a short pulse while the device was illuminated by the 4010 nm pulse laser. The rising time is 8 ns, and the amplitude is 10.2 mV. The result reveals that the metal-IPAS induced LSPR successfully detects mid-IR light with photon energy less than Schottky barrier height.

Conference Presentation

Citation Download Citation

Hong-Jhang Syu, Zih-Chun Su, Yu-Chieh Huang, Wei-Che Chang, and Ching-Fuh Lin "Localized surface plasmon resonance breaking the photodetection limit of Si-based Schottky photodetector", Proc. SPIE 11680, Physics and Simulation of Optoelectronic Devices XXIX, 1168004 (5 March 2021); https://doi.org/10.1117/12.2578656

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