Design methodology of high-gain III-V digital alloy avalanche photodiodes

Sheikh Z. Ahmed; Jiyuan Zheng; Yaohua Tan; Joe C. Campbell; Avik W. Ghosh

doi:10.1117/12.2578959

5 March 2021 Design methodology of high-gain III-V digital alloy avalanche photodiodes

Sheikh Z. Ahmed, Jiyuan Zheng, Yaohua Tan, Joe C. Campbell, Avik W. Ghosh

Proceedings Volume 11680, Physics and Simulation of Optoelectronic Devices XXIX; 116800V (2021) https://doi.org/10.1117/12.2578959
Event: SPIE OPTO, 2021, Online Only

Abstract

Many III-V digital alloy avalanche photodiodes have experimentally demonstrated very low excess noise. The presence of minigaps and enhanced valence band effective mass leads to the enhanced performance. Using first principle calculations and environment-dependent tight binding model we study the correlation of these properties with material parameters like stress. Furthermore, using NEGF formalism we study how these minigaps and mass enhancement impact the electron tunneling and phonon scattering processes in digital alloys. Based on our calculations, we propose some empirical inequalities for quantifying the effectiveness of such minigaps in making the device unipolar and thus high gain.

Conference Presentation

Citation Download Citation

Sheikh Z. Ahmed, Jiyuan Zheng, Yaohua Tan, Joe C. Campbell, and Avik W. Ghosh "Design methodology of high-gain III-V digital alloy avalanche photodiodes", Proc. SPIE 11680, Physics and Simulation of Optoelectronic Devices XXIX, 116800V (5 March 2021); https://doi.org/10.1117/12.2578959

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