Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

A. Uedono; H. Sakurai; T. Narita; K. Sierakowski; M. Bockowski; J. Suda; S. Ishibashi; S. F. Chichibu; T. Kachi

doi:10.1117/12.2575972

5 March 2021 Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. F. Chichibu, T. Kachi

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861P (2021) https://doi.org/10.1117/12.2575972
Event: SPIE OPTO, 2021, Online Only

Abstract

Vacancies in Mg-implanted GaN were probed using positron annihilation technique. Mg was implanted into GaN with [Mg] = 1E19 /cm3. For an as-implanted sample, the major defect species was identified as Ga-vacancy related defects. The sample was annealed under a nitrogen pressure of 1 GPa in a temperature range of 1000–1480C without a protective capping layer. Comparing with the sample annealed with the capping layer, although no large difference in the defect spices was observed, their concentration was decreased by the cap-less annealing. The diffusion of Mg during annealing was influenced by the presence of residual vacancies. H was unintentionally incorporated into the sample during annealing, and its diffusion property were also affected by vacancies and Mg. A part of this work was supported by MEXT “Research and development of next-generation semiconductor to realize energy-saving society (JPJ005357)” and the Polish National Science Centre through project No 2018/29/B/ST5/00338.

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A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. F. Chichibu, and T. Kachi "Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861P (5 March 2021); https://doi.org/10.1117/12.2575972

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