Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE

Michal Bockowski; Kacper Sierakowski; Rafal Jakiela; Marcin Turek; Piotr Jaroszyński; Paweł Kempisty; Michał Fijałkowski

doi:10.1117/12.2577013

5 March 2021 Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE

Michal Bockowski, Kacper Sierakowski, Rafal Jakiela, Marcin Turek, Piotr Jaroszyński, Paweł Kempisty, Michał Fijałkowski

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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861U (2021) https://doi.org/10.1117/12.2577013
Event: SPIE OPTO, 2021, Online Only

Abstract

Diffusion of Be was investigated for the main crystallographic directions in HVPE-GaN: c [0001], m [10-10], and a [11-20]. Be was implanted into the samples at room temperature with a dose of 2.9e15 cm-2 with energy of 200 keV. Ultra-high pressure annealing (UHPA) was performed to repair the post-implantation damage and activate the dopant. The annealing was performed at different time (15 and 30 minutes) and temperature (1200 – 1400°C). Depth profiles of Be were measured by secondary ion mass spectrometry (SIMS). Diffusion coefficients were calculated using the complementary error function (erfc) or Boltzmann-Matano analysis. The determined diffusion coefficients were summarized in an Arrhenius plot: D(1/T). From this relation the pre-exponential factor D0 and the activation energy were calculated. In addition, it was possible to calculate the formation energy for interstitial Be as well as gallium vacancy defects.

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Michal Bockowski, Kacper Sierakowski, Rafal Jakiela, Marcin Turek, Piotr Jaroszyński, Paweł Kempisty, and Michał Fijałkowski "Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861U (5 March 2021); https://doi.org/10.1117/12.2577013

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