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Recent progress in developing tunable mid-IR (2.6 um range) integrated hybrid lasers, are demonstrated. the hybrid laser includes gain chips based on AlGaInAsSb/GaSb quantum wells and tunable reflectors based on micron-scale silicon on insulator integrated photonics platform. The devices exhibit milliwatt-level average power, 10 mW of peak powers and tuning ranges up to 60 nm. Factors limiting tuning range, spectral purity and maximum power are discussed. The demonstrated platform enables realization of tunable lasers for a wide range of applications requiring high performance light sources with emission wavelengths from 1.8 µm to 3 µm and beyond.
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Jukka Viheriälä, Samu-Pekka Ojanen, Eero Koivusalo, Nouman Zia, Mikko T. Harjanne, Matteo Cherchi, Timo Aalto, Mircea Guina, "Widely tunable hybrid lasers at 2.6 µm wavelength based on micron-scale silicon-on-insulator waveguide technology and GaSb gain chips," Proc. SPIE 11689, Integrated Optics: Devices, Materials, and Technologies XXV, 116890U (5 March 2021); https://doi.org/10.1117/12.2576493