Single photo detector epitaxial design and optimization

Wenliang Hu; Zhiqiang Qi; Haocheng Sun

doi:10.1117/12.2586324

12 March 2021 Single photo detector epitaxial design and optimization

Wenliang Hu, Zhiqiang Qi, Haocheng Sun

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 1176325 (2021) https://doi.org/10.1117/12.2586324
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

This article uses semiconductor simulation software to simulate the composition concentration and thickness of the epitaxial structure of the InGaAsP near-infrared single photo avalanche detector. By optimizing and adjusting different parameters, this study manifests the ideal inner energy band, electrical field distribution, making the overall performance of the SPAD has been improved. The calculation results of I-V curve show that by controlling the thickness of the charge layer and multiplication layer within a certain range, the punch voltage and avalanche voltage of the device can be appropriately reduced to 25V and 72V, and the maximum multiplication factor can be obtained over 10000 under the avalanche voltage. By depicting the infrared spectrum response curve, it can be seen that in the range of 0.9 to 1.55um, the internal quantum efficiency of the SPAD is basically maintained above 70%, indicating that the device has a high photon conversion efficiency and meets the demand for single-photon detection.

Citation Download Citation

Wenliang Hu, Zhiqiang Qi, and Haocheng Sun "Single photo detector epitaxial design and optimization", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 1176325 (12 March 2021); https://doi.org/10.1117/12.2586324

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