Ultrafast relaxation dynamics of semiconducting carbon nanotube exciton polaritons

Ryan T. Allen; Abitha Dhavamani; Minjung Son; Michael S. Arnold; Martin T. Zanni

doi:10.1117/12.2593537

1 August 2021 Ultrafast relaxation dynamics of semiconducting carbon nanotube exciton polaritons

Ryan T. Allen, Abitha Dhavamani, Minjung Son, Michael S. Arnold, Martin T. Zanni

Proceedings Volume 11799, Physical Chemistry of Semiconductor Materials and Interfaces XX; 117991B (2021) https://doi.org/10.1117/12.2593537
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Conference Poster

Abstract

Strong light-matter coupling results in new eigenstates called polaritons which share properties of both light and matter and provide a useful way of modifying electronic energies. The energies of the new eigenstates depend on the concentration of molecules in the cavity. In this work, we change the concentration of Carbon Nanotubes (CNTs) in a Fabry-Perot cavity and achieve a maximum Rabi splitting of 4000 cm-1. The effects of concentration are studied with Transient Reflection (TR) spectroscopy, and we find that transfer rates between polariton states are enhanced by two orders of magnitude when their energy differences are resonant with the CNT G-band phonon energy of 1580 cm-1. The G-band phonon mode is also known to be important for exciton transfer between CNTs. The relaxation times of the system closely resemble those of CNTs outside of a cavity (~ 5 ps) which we attribute to the short lifetime of the cavity modes. The short-lived cavity modes cause the effects of the phonon mode resonances to be observed through peak intensities rather than kinetic traces. These results show that the G-band phonon mode is important for increasing excitation density in CNT polariton devices.

Citation Download Citation

Ryan T. Allen, Abitha Dhavamani, Minjung Son, Michael S. Arnold, and Martin T. Zanni "Ultrafast relaxation dynamics of semiconducting carbon nanotube exciton polaritons", Proc. SPIE 11799, Physical Chemistry of Semiconductor Materials and Interfaces XX, 117991B (1 August 2021); https://doi.org/10.1117/12.2593537

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