EUV attenuated phase shift mask: development and characterization of mask properties

Ikuya Fukasawa; Yohei Ikebe; Takeshi Aizawa; Tsutomu Shoki; Takahiro Onoue

doi:10.1117/12.2606239

30 September 2021 EUV attenuated phase shift mask: development and characterization of mask properties

Ikuya Fukasawa, Yohei Ikebe, Takeshi Aizawa, Tsutomu Shoki, Takahiro Onoue

Proceedings Volume 11855, Photomask Technology 2021; 118550N (2021) https://doi.org/10.1117/12.2606239
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

Toward logic 3nm and beyond, mask 3D effect and stochastic failure are main issues in EUV lithography. Alternative absorber material is required to mitigate those issues. EUV attenuated phase shift type absorber with low n value enables to achieve higher NILS due to phase cancellation effect. And much better imaging performance can be expected. We developed candidate attenuated phase shift type absorbers and evaluated these blank and mask properties. In this paper, we will report on those blank and mask properties for the candidate phase shift type absorbers.

Conference Presentation

Citation Download Citation

Ikuya Fukasawa, Yohei Ikebe, Takeshi Aizawa, Tsutomu Shoki, and Takahiro Onoue "EUV attenuated phase shift mask: development and characterization of mask properties", Proc. SPIE 11855, Photomask Technology 2021, 118550N (30 September 2021); https://doi.org/10.1117/12.2606239

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