At EUV lithography, an EUV mirror can be easily contaminated with carbon. This carbon contamination causes the reflectance drop of the Mo/Si multilayer mirror. For the carbon-contamination cleaning, hydrogen gas is introduced at a pressure of a few Pascal in the EUV exposure tool. However, during this process, the hydrogen damage would be caused on a Mo/Si multilayer, which would decrease EUV reflectance of the multilayer. The cleaning rate and damage threshold of hydrogen pressure and EUV dose were not well known. Therefore, an EUV irradiation tool in hydrogen atmosphere is developed and installed at the BL09 beamline of the NewSUBARU synchrotron light facility to evaluate the irradiation durability and cleaning effect of the Mo/Si multilayer under these conditions. The EUV-irradiation intensity was up to 6 W/cm2, and hydrogen pressure was up to 70 Pa. The contamination was occurred at the low-hydrogen-pressure conditions from 0 to 5 Pa. The contamination was not occurred at the high-hydrogen-pressure condition of 20 and 68 Pa. In addition, the sample with many particles on the surface was damaged by the EUV-induced plasma.
|