PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
A single transverse mode high pulse-energy GaSb VECSEL emitting at 2030 nm was studied. The peak power exceeds 500 W while maintaining good beam quality throughout the operation range. The cavity employs a Pockels cell combined with a low-loss thin film polarizer to selectively dump the intracavity energy in a 10 ns pulse. Thermal mitigation of the gain chip is achieved by both gain-switching and utilizing a long wavelength pump laser at 1470 nm compared to the traditional 980 nm pump for GaSb VECSELs. The laser has promise for incoherent LIDAR, materials processing, gas sensing, and nonlinear optics.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.