LEDs on a GaN-on-Si wafer stacked with a Si-based circuit board through via holes

Selvy U. Hepriyadi; Mei-Yun Zhang; Jun-Wei Zhou; Pinghui S. Yeh

doi:10.1117/12.2608660

5 March 2022 LEDs on a GaN-on-Si wafer stacked with a Si-based circuit board through via holes

Selvy U. Hepriyadi, Mei-Yun Zhang, Jun-Wei Zhou, Pinghui S. Yeh

Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII; 120010G (2022) https://doi.org/10.1117/12.2608660
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

LEDs on a GaN epitaxial wafer grown on a Si substrate were directly bonded on a Si-based circuit board by utilizing via holes. The via holes were etched by deep reactive ion etching (DRIE) on the Si side of the LED wafer. The un-doped GaN in the via holes was further removed by inductively-coupled-plasma reactive ion etching (ICP-RIE). Metal layers were then deposited on the via holes and annealed. We used lead-free solder to bond the n-GaN of LEDs to the n-electrodes on a metal-wire-patterned Si wafer. Characterization in terms of I-V, L-I curves, emission images and spectrum is reported.

Citation Download Citation

Selvy U. Hepriyadi, Mei-Yun Zhang, Jun-Wei Zhou, and Pinghui S. Yeh "LEDs on a GaN-on-Si wafer stacked with a Si-based circuit board through via holes", Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 120010G (5 March 2022); https://doi.org/10.1117/12.2608660

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