The technology of ion beam etching at extreme-low temperature used in preparing HgCdTe photoconductive devices

Jia Jia; Fan Shi

doi:10.1117/12.2617346

9 December 2021 The technology of ion beam etching at extreme-low temperature used in preparing HgCdTe photoconductive devices

Jia Jia, Fan Shi

Author Affiliations +

Proceedings Volume 12030, Third International Conference on Optoelectronic Science and Materials (ICOSM 2021); 120300L (2021) https://doi.org/10.1117/12.2617346
Event: Third International Conference on Optoelectronic Science and Materials (ICOSM 2021), 2021, Hefei, China

Abstract

HgCdTe is the most widely used material for infrared detectors’ fabricating, basically because of its superior photonelectronic characters. As the fabrication process is comparatively simple and the cost could be very low, HgCdTe photoconductive (PC) detectors still receive widespread applications in many detection fields. For HgCdTe PC detectors, ion beam etching (IBE) is the most commonly used technology for detectors’ micro mesa isolation. Ion beams used for etching have certain amounts of energy that would induce some etching damages being processed and also raise the temperature of HgCdTe material. These effects would impact the photon-electronic characters of HgCdTe PC detectors finally obtained. In order to improve the performance of HgCdTe PC devices, we may fabricate them at an extreme-low temperature (ELT). In this paper, we studied some characteristics of argon-ion (Ar⁺) beam etching at ELT. Furthermore, we not only successfully prepared long-wavelength (LW) HgCdTe PC devices by etching at near liquid nitrogen temperature (LNT), but also compared the testing performances with those obtained by etching at near room temperature (RT).

Citation Download Citation

Jia Jia and Fan Shi "The technology of ion beam etching at extreme-low temperature used in preparing HgCdTe photoconductive devices", Proc. SPIE 12030, Third International Conference on Optoelectronic Science and Materials (ICOSM 2021), 120300L (9 December 2021); https://doi.org/10.1117/12.2617346

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