Poster + Presentation + Paper
25 May 2022 Prediction of line-and-space pattern after etching based on scanning electron microscope image of corresponding resist pattern using machine learning
Yuqing Jin, Takahiro Kozawa
Author Affiliations +
Conference Poster
Abstract
Scanning electron microscopy (SEM) image is an indispensable device in inspection of photoresist and etched Si patterns. On the other hand, extreme ultraviolet (EUV) radiation offers high resolution in lithography fabrication. Owing to the application of EUV, the feature size of photomask produced by electron beam (EB) lithography is reduced as well. The reduction of feature size made the information extraction from SEM image difficult due to the technical limitation. This proceeding reports a strategy to extract the information of line-and-space pattern. The main step classification of line, space and edge class was realized by unsupervised machine learning – hierarchical clustering. Hierarchical clustering can integrate the brightness and coordination information in classification, and thus the classification ability of it is better than image thresholding. Furthermore, the classification result was used in prediction for etching pattern. The precision and recall of prediction were verified by confusion matrix.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuqing Jin and Takahiro Kozawa "Prediction of line-and-space pattern after etching based on scanning electron microscope image of corresponding resist pattern using machine learning", Proc. SPIE 12055, Advances in Patterning Materials and Processes XXXIX, 120550T (25 May 2022); https://doi.org/10.1117/12.2614161
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KEYWORDS
Etching

Scanning electron microscopy

Silicon

Machine learning

Image classification

Electron microscopes

Extreme ultraviolet

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