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24 November 2021 High saturation and broadband uni-traveling-carrier photodiode for optical communication system
Jia Zhang, Jianguo Yu, Kaile Li
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Proceedings Volume 12065, AOPC 2021: Optical Sensing and Imaging Technology; 1206516 (2021) https://doi.org/10.1117/12.2605303
Event: Applied Optics and Photonics China 2021, 2021, Beijing, China
Abstract
An optimized broadband and high saturation uni-traveling-carrier photodiode is designed for optical communication system in this paper. The epitaxial layer is optimized by adopting linear doping in the absorption layer and inserting cliff layer, so as to obtain high speed and high saturation performance. According to comparing the performance of device with different thickness and doping concentration of cliff layer, the optimal epitaxial layer parameters are selected to reach the better performance. Theory and simulation study indicate that bandwidth and saturation current of the optimized device are 140 GHz and 120mA respectively, and dark current is 2 pA at 2V reverse bias.
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Jia Zhang, Jianguo Yu, and Kaile Li "High saturation and broadband uni-traveling-carrier photodiode for optical communication system", Proc. SPIE 12065, AOPC 2021: Optical Sensing and Imaging Technology, 1206516 (24 November 2021); https://doi.org/10.1117/12.2605303
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KEYWORDS
Doping
Absorption
Photodiodes
Electrons
Optical communications
PIN photodiodes
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