Paper
30 January 2022 Light sensitive memristors based on GeSixOy films with Ge nanoclusters
Vladimir A. Volodin, Gennady N. Kamaev, Ivan D. Yushkov, Gregory K. Krivyakin, Svetlana G. Cherkova, Michel Vergnat
Author Affiliations +
Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121570A (2022) https://doi.org/10.1117/12.2622642
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation
Abstract
For the development of information technology, more and more memory arrays are needed. Recently, memristors have been the most promising candidates for the creation of modern universal memory. The possibility of light stimulated resistive switching (RS) is promising for creating optical computers, technical vision and neuron networks. The studied SixGeyOz solid alloys films (~50-65 nm) were obtained by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum (10-8 Torr) and deposition onto n+-type, p+-type Si(001), and on Al/SiO2/Si(001) heated up to 100°C. The transparent indium tin oxide (ITO) contacts were used as top electrode. It was found, that as-deposited GeOx[SiO](1-x) films contain amorphous Ge (a-Ge) nanoclusters. The furnace annealing at temperature 500 °C lead to further forming of a-Ge clusters in both types of the films. Reversible (up to several thousand cycles) RS from high resistance state (HRS) to low resistance state (LRS) (memristor effect) were observed for the semiconductor-dielectric-metal structures, namely p+-Si (or n+-Si)/ GeO[SiO2] (or GeO[SiO]) /ITO structures (MIS structures) in air atmosphere. Both negative and positive photoconductivity was observed in the annealed MIS structure when both negative/positive voltage biases were applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes from a-Ge nanoclusters, which act as deep traps. The effects of light-induced RS was observed for annealed MIS structures based on GeO[SiO] films with a-Ge nanoclusters. These results are promising for creation of photomemristors and optoelectronic devices combining the properties of a memristor.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Volodin, Gennady N. Kamaev, Ivan D. Yushkov, Gregory K. Krivyakin, Svetlana G. Cherkova, and Michel Vergnat "Light sensitive memristors based on GeSixOy films with Ge nanoclusters", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121570A (30 January 2022); https://doi.org/10.1117/12.2622642
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Germanium

Remote sensing

Silicon

Electrodes

Raman spectroscopy

Annealing

Silicate glass

Back to Top