Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET

Andrei V. Borzdov; Vladimir M. Borzdov; Vladimir V. Vyurkov

doi:10.1117/12.2624174

30 January 2022 Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET

Andrei V. Borzdov, Vladimir M. Borzdov, Vladimir V. Vyurkov

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121570Y (2022) https://doi.org/10.1117/12.2624174
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

Drain current photoresponse of deep submicron SOI MOSFET with 50 nm channel length is simulated by ensemble Monte Carlo method. The photoresponse is simulated under the effect of picosecond laser pulses with 532 and 650 nm wavelengths at 5⋅10¹⁰ and 10¹¹ W/m² intensity. The current decay and the dynamics of generated charge carriers in the transistor channel are studied.

Citation Download Citation

Andrei V. Borzdov, Vladimir M. Borzdov, and Vladimir V. Vyurkov "Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121570Y (30 January 2022); https://doi.org/10.1117/12.2624174

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