Methylated porous low-k materials: critical properties and plasma resistance

A. A. Rezvanov; A. V. Miakonkikh; A. S. Vishnevskiy; D. S. Seregin; K. A. Vorotilov; K. V. Rudenko; M. R. Baklanov

doi:10.1117/12.2624608

30 January 2022 Methylated porous low-k materials: critical properties and plasma resistance

A. A. Rezvanov, A. V. Miakonkikh, A. S. Vishnevskiy, D. S. Seregin, K. A. Vorotilov, K. V. Rudenko, M. R. Baklanov

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 1215716 (2022) https://doi.org/10.1117/12.2624608
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

Porous OSG low-k dielectrics deposited by using TEOS and MTEOS mixture with different ratios and Brij® 30 surfactant. The deposited samples contain a different concentration of terminal methyl groups that is proportional to MTEOS concentration. An increase in the methyl groups concentration by changing TEOS/MTEOS ratio decreases the open porosity, k-value, and Young’s modulus and increases the mean pore radius although the template concentration was kept constant. Plasma damage by fluorine radicals depends on the carbon concentration in the films. It can be reduced by 60% when the carbon concentration in the film exceeds 10 atomic percent as measured by XPS (the films deposited with TEOS/MTEOS ratio 40/60).

Citation Download Citation

A. A. Rezvanov, A. V. Miakonkikh, A. S. Vishnevskiy, D. S. Seregin, K. A. Vorotilov, K. V. Rudenko, and M. R. Baklanov "Methylated porous low-k materials: critical properties and plasma resistance", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215716 (30 January 2022); https://doi.org/10.1117/12.2624608

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