Paper
7 December 2022 High-speed heteroepitaxial In0.52Al0.48As/In0.53Ga0.47As/InP PIN photodiodes with superlattice structure
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Proceedings Volume 12341, 28th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics; 123410S (2022) https://doi.org/10.1117/12.2644856
Event: 28th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics, 2022, Tomsk, Russia
Abstract
The article provides the PIN-photodiode semiconductor structure In0.52Al0.48As/In0.53Ga0.47As/InP computer simulation results. The structure was grown on an InP-substrate by the method of molecular beam epitaxy. In modeling, PIN-photodiode mathematical model was constructed, with the help of which photocurrent values were obtained for various thicknesses of the undoped section in photodiode absorbing layer. The photodiode response time values are also obtained.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrey A. Udalov, Evgeniy V. Shesterikov, and Ivan V. Kulinich "High-speed heteroepitaxial In0.52Al0.48As/In0.53Ga0.47As/InP PIN photodiodes with superlattice structure", Proc. SPIE 12341, 28th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics, 123410S (7 December 2022); https://doi.org/10.1117/12.2644856
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KEYWORDS
Superlattices

PIN photodiodes

Semiconductors

Heterojunctions

Photodiodes

Molecular beam epitaxy

Performance modeling

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