Investigation the dependence of the photoelectric current of an InGaAs/InAlAs photodiode on the surface geometry

Ivan V. Kulinich; Alexey A. Ivashkin; Angelina A. Guliaeva; Evgeniy V. Shesterikov

doi:10.1117/12.2644939

7 December 2022 Investigation the dependence of the photoelectric current of an InGaAs/InAlAs photodiode on the surface geometry

Ivan V. Kulinich, Alexey A. Ivashkin, Angelina A. Guliaeva, Evgeniy V. Shesterikov

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Proceedings Volume 12341, 28th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics; 1234118 (2022) https://doi.org/10.1117/12.2644939
Event: 28th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics, 2022, Tomsk, Russia

Abstract

The treatise presents the results that allow assessing the impact of the semiconductor-air interface geometry on the PIN diode characteristics. The study describes the semiconductor InGaAs/InAlAs-structure of the PIN photodiode grown on an InP-substrate and presents its topological scheme. For the study, a mathematical model of the PIN photodiode was built that describes the motion of charged particles and their distribution in the structure on the basis of Fermi-Dirac distribution function and the stimulated absorption of the electromagnetic radiation. The calculations yielded the dependence of the diode photoelectric current on the semiconductor-air interface geometry.

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Ivan V. Kulinich, Alexey A. Ivashkin, Angelina A. Guliaeva, and Evgeniy V. Shesterikov "Investigation the dependence of the photoelectric current of an InGaAs/InAlAs photodiode on the surface geometry", Proc. SPIE 12341, 28th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics, 1234118 (7 December 2022); https://doi.org/10.1117/12.2644939

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KEYWORDS

Photodiodes

PIN photodiodes

Semiconductors

Interfaces

Absorption

Electromagnetic radiation

Etching

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