Crystallization of a-Si films deposited by RF sputtering using blue direct diode laser

Mitsuoki Hishida; Naohiko Kobata; Kentaro Miyano; Hiroaki Suzuki; Masaki Nobuoka; Tatsuya Okada; Takashi Noguchi

doi:10.1117/12.2651151

17 March 2023 Crystallization of a-Si films deposited by RF sputtering using blue direct diode laser

Mitsuoki Hishida, Naohiko Kobata, Kentaro Miyano, Hiroaki Suzuki, Masaki Nobuoka, Tatsuya Okada, Takashi Noguchi

Proceedings Volume 12409, Laser-based Micro- and Nanoprocessing XVII; 1240912 (2023) https://doi.org/10.1117/12.2651151
Event: SPIE LASE, 2023, San Francisco, California, United States

Abstract

A Welding/Cutting laser system that uses Wavelength Beam Combining (WBC) technology for semiconductor blue lasers, the specifications for are 445 (nm) regions in wavelength, 400 (W) in output power with a fiber diameter of ≤50 (μm) and 2.0 (mm*mrad) (typical) in beam parameter product has developed. It is also possible to combine multiple of these to increase the power to a multi-kW level. Using this laser light source, we tried a laser annealing experiment on a sputtered amorphous silicon film (50 nm thickness) on inexpensive glass with the line laser (4.0 (mm)×38 (μm)). The result shows a high crystallinity and full width at half maximum (cm^-1) < 7 (nm) at the peak position of 517 (cm^-1) with Raman microscope, which was high uniformity in the in the 4mm length in long axis direction.

Conference Presentation

Citation Download Citation

Mitsuoki Hishida, Naohiko Kobata, Kentaro Miyano, Hiroaki Suzuki, Masaki Nobuoka, Tatsuya Okada, and Takashi Noguchi "Crystallization of a-Si films deposited by RF sputtering using blue direct diode laser", Proc. SPIE 12409, Laser-based Micro- and Nanoprocessing XVII, 1240912 (17 March 2023); https://doi.org/10.1117/12.2651151

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