GaN-on-silicon nanowire technology for microLED devices.

Pierre Tchoulfian; Ulrich Steegmueller; Benoît Amstatt; Markus Broell; Philippe Gilet

doi:10.1117/12.2652105

14 March 2023 GaN-on-silicon nanowire technology for microLED devices.

Pierre Tchoulfian, Ulrich Steegmueller, Benoît Amstatt, Markus Broell, Philippe Gilet

Author Affiliations +

Proceedings Volume 12441, Light-Emitting Devices, Materials, and Applications XXVII; 1244109 (2023) https://doi.org/10.1117/12.2652105
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

GaN-on-Silicon nanowire technology is promising for several display applications. Since one of the microLED display major challenges is to drastically reduce the cost, the possibility to downsize the microLED is paramount. Aledia has developed a nanowire microLED technology on large Si wafers which keeps the same blue emission efficiency for ⪅2μm size devices containing only 1 NW as for larger devices containing up to few hundreds of NWs. A RGB integrated pixel relying on this technology is presented where quantum dots are used for green and red color conversion. Another nanowire microLED concept for AR/MR applications is also presented where light emission directivity and pixel size downsizing are mandatory.

Conference Presentation

Citation Download Citation

Pierre Tchoulfian, Ulrich Steegmueller, Benoît Amstatt, Markus Broell, and Philippe Gilet "GaN-on-silicon nanowire technology for microLED devices.", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 1244109 (14 March 2023); https://doi.org/10.1117/12.2652105

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