Broadband photodetector based on CdS/Sb2Se3 heterojunction

Kewen Wu; Xiaoliang Weng; Yifei Xie

doi:10.1117/12.2658820

23 November 2022 Broadband photodetector based on CdS/Sb₂Se₃ heterojunction

Kewen Wu, Xiaoliang Weng, Yifei Xie

Proceedings Volume 12454, International Symposium on Robotics, Artificial Intelligence, and Information Engineering (RAIIE 2022); 124540E (2022) https://doi.org/10.1117/12.2658820
Event: International Symposium on Robotics, Artificial Intelligence, and Information Engineering (RAIIE 2022), 2022, Hohhot, China

Abstract

Broadband photodetectors have attractive application prospects in optical communication, image sensing, and environmental monitoring. Though narrow band gap semiconductors with good stability and low cost is an ideal candidate for achieving a relatively wide spectral response, heterojunction structures are usually proposed for constructing high-performance photodetectors with a broader spectral response and more fascinating optical-electrical characteristics. Here, a CdS/Sb₂Se₃ heterojunction photodetector was fabricated by magnetron sputtering, and morphology, microstructure, and photoelectric detection performance were studied. It is revealed that a high quality CdS and Sb₂Se₃ film with good crystallinity were gained by utilizing our growth parameters. Moreover, a CdS surface consisting of homogeneous nano islands was observed. In particular, CdS/Sb₂Se₃ heterojunction exhibits an ultra-wide photoelectric response range (365 nm ~ 1064 nm) and an ultra-fast photoresponse (< 0.2 ms). Our results proposed that these improvements on photoelectric detection performance of heterojunction is attributed to the microstructure of deposited films. This study provides a new prototype for the applications of broadband photodetector.

Citation Download Citation

Kewen Wu, Xiaoliang Weng, and Yifei Xie "Broadband photodetector based on CdS/Sb₂Se₃ heterojunction", Proc. SPIE 12454, International Symposium on Robotics, Artificial Intelligence, and Information Engineering (RAIIE 2022), 124540E (23 November 2022); https://doi.org/10.1117/12.2658820

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KEYWORDS

Photodetectors

Cadmium sulfide

Heterojunctions

Selenium

Antimony

Sputter deposition

Crystals

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